Infineon RF Switch Circuit, 10-Pin TSNP
- RS-stocknr.:
- 222-4779
- Fabrikantnummer:
- BGS14PN10E6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 7500 eenheden)*
€ 2.130,00
(excl. BTW)
€ 2.580,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 7.500 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 7500 + | € 0,284 | € 2.130,00 |
*prijsindicatie
- RS-stocknr.:
- 222-4779
- Fabrikantnummer:
- BGS14PN10E6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Technology | RF | |
| Product Type | RF Switch Circuit | |
| Modulation Technique | QAM | |
| Package Type | TSNP | |
| Pin Count | 10 | |
| Mount Type | Surface | |
| Operating Band 1 Frequency | 0.5GHz | |
| Minimum Supply Voltage | 1.8V | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | RoHS and WEEE | |
| Height | 0.38mm | |
| Series | BGS14PN10 | |
| Width | 1.5 mm | |
| Length | 1.1mm | |
| Number of Operating Bands | 1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Technology RF | ||
Product Type RF Switch Circuit | ||
Modulation Technique QAM | ||
Package Type TSNP | ||
Pin Count 10 | ||
Mount Type Surface | ||
Operating Band 1 Frequency 0.5GHz | ||
Minimum Supply Voltage 1.8V | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals RoHS and WEEE | ||
Height 0.38mm | ||
Series BGS14PN10 | ||
Width 1.5 mm | ||
Length 1.1mm | ||
Number of Operating Bands 1 | ||
Automotive Standard No | ||
The Infineon BGS14PN10 is a Single Pole Quad Throw (SP4T) high linearity, high power RF switch optimized for mobile phone applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a two simple, CMOS or TTL compatible control input signals. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.
No DC decoupling components required, if no external DC is
applied on RF ports
High ESD robustness
Low harmonic generation
High linearity
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