onsemi 650 V 40 A Diode 3-Pin TO-247-3LD FFSH4065BDN
- RS-stocknr.:
- 277-074
- Fabrikantnummer:
- FFSH4065BDN
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 10,63
(excl. BTW)
€ 12,86
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 10,63 |
| 10 - 99 | € 9,56 |
| 100 - 499 | € 8,82 |
| 500 - 999 | € 8,18 |
| 1000 + | € 7,33 |
*prijsindicatie
- RS-stocknr.:
- 277-074
- Fabrikantnummer:
- FFSH4065BDN
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-3LD | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | FFSH | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 160μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 889A | |
| Maximum Forward Voltage Vf | 2.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-3LD | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series FFSH | ||
Pin Count 3 | ||
Peak Reverse Current Ir 160μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 889A | ||
Maximum Forward Voltage Vf 2.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- Land van herkomst:
- CN
The ON Semiconductor Schottky diode offer superior switching performance and higher reliability compared to traditional Silicon diodes. It features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance, making SiC the next generation of power semiconductors. The system benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, and smaller, more cost-effective system designs. These advantages make SiC Schottky diodes ideal for high-performance power applications.
Max junction temperature 175°C
Avalanche rated 94 mJ
High surge current capacity
Positive temperature coefficient
Ease of paralleling
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