STMicroelectronics 650 V 30 A Schottky Diode SiC Schottky 7-Pin HU3PAK STPSC30G065L2Y
- RS-stocknr.:
- 719-662
- Fabrikantnummer:
- STPSC30G065L2Y
- Fabrikant:
- STMicroelectronics
Subtotaal (1 rol van 600 eenheden)*
€ 2.821,20
(excl. BTW)
€ 3.413,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 23 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 600 + | € 4,702 | € 2.821,20 |
*prijsindicatie
- RS-stocknr.:
- 719-662
- Fabrikantnummer:
- STPSC30G065L2Y
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | HU3PAK | |
| Maximum Continuous Forward Current If | 30A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | STPSC | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 7 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1100A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.3V | |
| Peak Reverse Current Ir | 1200μA | |
| Maximum Operating Temperature | 175°C | |
| Width | 14.1 mm | |
| Length | 11.9mm | |
| Height | 3.6mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Schottky Diode | ||
Mount Type Through Hole | ||
Package Type HU3PAK | ||
Maximum Continuous Forward Current If 30A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series STPSC | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Rectifier Type SiC Schottky | ||
Pin Count 7 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1100A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.3V | ||
Peak Reverse Current Ir 1200μA | ||
Maximum Operating Temperature 175°C | ||
Width 14.1 mm | ||
Length 11.9mm | ||
Height 3.6mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
AEC-Q101 qualified and PPAP capable
No reverse recovery charge in application current range
Switching behaviour independent of temperature
High forward surge current capability
ECOPACK2 compliant component
SMD with TOP side cooling package