Vishay 650V 4A, SiC Schottky Diode, 3-Pin 2L TO-220AC VS-C04ET07T-M3
- RS-stocknr.:
- 209-8109
- Fabrikantnummer:
- VS-C04ET07T-M3
- Fabrikant:
- Vishay
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RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 209-8109
- Fabrikantnummer:
- VS-C04ET07T-M3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Mounting Type | Through Hole | |
| Package Type | 2L TO-220AC | |
| Maximum Continuous Forward Current | 4A | |
| Peak Reverse Repetitive Voltage | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky Diode | |
| Diode Type | SiC Schottky | |
| Pin Count | 3 | |
| Diode Technology | SiC Schottky | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Mounting Type Through Hole | ||
Package Type 2L TO-220AC | ||
Maximum Continuous Forward Current 4A | ||
Peak Reverse Repetitive Voltage 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky Diode | ||
Diode Type SiC Schottky | ||
Pin Count 3 | ||
Diode Technology SiC Schottky | ||
The Vishay 650 V Power SiC Merged PIN Schottky Diode with forward Current of 4A.
Majority carrier diode using Schottky technology on SiC wide band gap material
Positive VF temperature coefficient for easy paralleling
Virtually no recovery tail and no switching losses
Temperature invariant switching behaviour
175 °C maximum operating junction temperature
MPS structure for high ruggedness to forward current surge events
Positive VF temperature coefficient for easy paralleling
Virtually no recovery tail and no switching losses
Temperature invariant switching behaviour
175 °C maximum operating junction temperature
MPS structure for high ruggedness to forward current surge events
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