onsemi 650 V 8 A SiC Schottky Schottky 5-Pin PQFN
- RS-stocknr.:
- 214-8795
- Fabrikantnummer:
- FFSM0865B
- Fabrikant:
- onsemi
Subtotaal (1 rol van 3000 eenheden)*
€ 3.582,00
(excl. BTW)
€ 4.335,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 1,194 | € 3.582,00 |
*prijsindicatie
- RS-stocknr.:
- 214-8795
- Fabrikantnummer:
- FFSM0865B
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | SiC Schottky | |
| Mount Type | Surface | |
| Package Type | PQFN | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Rectifier Type | Schottky | |
| Pin Count | 5 | |
| Peak Reverse Current Ir | 40μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Length | 8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type SiC Schottky | ||
Mount Type Surface | ||
Package Type PQFN | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Rectifier Type Schottky | ||
Pin Count 5 | ||
Peak Reverse Current Ir 40μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.7V | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Length 8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, Power88
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, Power88
The ON Semiconductor FFSM series is silicon carbide schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to silicon. It is typically used in inverters, SMPS and UPS etc.
Highest efficiency
Faster operating frequency
Increased power density
Reduced EMI
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