Infineon 4 V 110 mA Diode 4-Pin SOT-143
- RS-stocknr.:
- 261-3924
- Fabrikantnummer:
- BAT15099RE6327HTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 3000 eenheden)*
€ 828,00
(excl. BTW)
€ 1.002,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 02 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,276 | € 828,00 |
| 6000 - 6000 | € 0,248 | € 744,00 |
| 9000 + | € 0,224 | € 672,00 |
*prijsindicatie
- RS-stocknr.:
- 261-3924
- Fabrikantnummer:
- BAT15099RE6327HTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | SOT-143 | |
| Maximum Continuous Forward Current If | 110mA | |
| Peak Reverse Repetitive Voltage Vrrm | 4V | |
| Series | BAT15-099R | |
| Diode Configuration | Cross Over Ring | |
| Pin Count | 4 | |
| Peak Reverse Current Ir | 5μA | |
| Maximum Forward Voltage Vf | 0.32V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Height | 1mm | |
| Length | 2.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type SOT-143 | ||
Maximum Continuous Forward Current If 110mA | ||
Peak Reverse Repetitive Voltage Vrrm 4V | ||
Series BAT15-099R | ||
Diode Configuration Cross Over Ring | ||
Pin Count 4 | ||
Peak Reverse Current Ir 5μA | ||
Maximum Forward Voltage Vf 0.32V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Height 1mm | ||
Length 2.9mm | ||
Automotive Standard No | ||
The Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make a suitable choice for mixer functions in applications which frequencies are as high as 12 GHz.
RoHS compliant and halogen-free
Low capacitance and inductance
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