STMicroelectronics 1200V 30A, SiC Schottky Rectifier & Schottky Diode, 2-Pin DO-247 LL STPSC30G12WLY

The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.

None or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Avalanche energy rated