Vishay 650 V 20 A Rectifier & Schottky Diode MOS Barrier Schottky 3-Pin TO-220AC 2L VS-3C20ET07T-M3
- RS-stocknr.:
- 279-9481
- Fabrikantnummer:
- VS-3C20ET07T-M3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 260,45
(excl. BTW)
€ 315,15
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 950 stuk(s) vanaf 02 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 5,209 | € 260,45 |
| 100 - 450 | € 5,074 | € 253,70 |
| 500 + | € 4,949 | € 247,45 |
*prijsindicatie
- RS-stocknr.:
- 279-9481
- Fabrikantnummer:
- VS-3C20ET07T-M3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Mount Type | Surface | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | TO-220AC 2L | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | VS-3C20ET07 | |
| Diode Configuration | Single | |
| Rectifier Type | MOS Barrier Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 110A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.5V | |
| Peak Reverse Current Ir | 100μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 29.27mm | |
| Length | 10.51mm | |
| Width | 4.65 mm | |
| Standards/Approvals | JESD 201 Class 2 whisker test, RoHS and AEC-Q101 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Mount Type Surface | ||
Product Type Rectifier & Schottky Diode | ||
Package Type TO-220AC 2L | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series VS-3C20ET07 | ||
Diode Configuration Single | ||
Rectifier Type MOS Barrier Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 110A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.5V | ||
Peak Reverse Current Ir 100μA | ||
Maximum Operating Temperature 175°C | ||
Height 29.27mm | ||
Length 10.51mm | ||
Width 4.65 mm | ||
Standards/Approvals JESD 201 Class 2 whisker test, RoHS and AEC-Q101 | ||
Automotive Standard No | ||
The Vishay 650 V power SiC Gen 3 merged PIN schottky diode. It comes with improved VF and efficiency by thin wafer technology. Majority carrier diode using Schottky technology on SiC wide band gap material.
RoHS compliant
Halogen free
UL 94 V-0 flammability rating
Very low profile
Temperature invariant switching behaviour
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