Intelligent Memory IME1G16D2DEBG-25I SDRAM 1 GB Surface, 84-Pin 16 bit FBGA-84 Ball
- RS-stocknr.:
- 588-599
- Fabrikantnummer:
- IME1G16D2DEBG-25I
- Fabrikant:
- Intelligent Memory
Subtotaal (1 eenheid)*
€ 6,28
(excl. BTW)
€ 7,60
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 6,28 |
*prijsindicatie
- RS-stocknr.:
- 588-599
- Fabrikantnummer:
- IME1G16D2DEBG-25I
- Fabrikant:
- Intelligent Memory
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Intelligent Memory | |
| Product Type | SDRAM | |
| Memory Size | 1GB | |
| Data Bus Width | 16bit | |
| Number of Bits per Word | 64 | |
| Maximum Clock Frequency | 533MHz | |
| Maximum Random Access Time | 2.5ns | |
| Number of Words | 16777216 | |
| Mount Type | Surface | |
| Package Type | FBGA-84 Ball | |
| Pin Count | 84 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 95°C | |
| Series | IME1G | |
| Standards/Approvals | JEDEC, RoHS | |
| Maximum Supply Voltage | 1.9V | |
| Automotive Standard | AEC-Q100 | |
| Minimum Supply Voltage | 1.7V | |
| Alles selecteren | ||
|---|---|---|
Merk Intelligent Memory | ||
Product Type SDRAM | ||
Memory Size 1GB | ||
Data Bus Width 16bit | ||
Number of Bits per Word 64 | ||
Maximum Clock Frequency 533MHz | ||
Maximum Random Access Time 2.5ns | ||
Number of Words 16777216 | ||
Mount Type Surface | ||
Package Type FBGA-84 Ball | ||
Pin Count 84 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 95°C | ||
Series IME1G | ||
Standards/Approvals JEDEC, RoHS | ||
Maximum Supply Voltage 1.9V | ||
Automotive Standard AEC-Q100 | ||
Minimum Supply Voltage 1.7V | ||
- Land van herkomst:
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling
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