Infineon S27KL0642DPBHI020 SDRAM 64 MB Surface, 24-Pin 8 bit FBGA-24 Ball
- RS-stocknr.:
- 273-7512
- Fabrikantnummer:
- S27KL0642DPBHI020
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tray van 338 eenheden)*
€ 1.099,176
(excl. BTW)
€ 1.330,03
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 04 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 338 - 676 | € 3,252 | € 1.099,18 |
| 1014 + | € 3,124 | € 1.055,91 |
*prijsindicatie
- RS-stocknr.:
- 273-7512
- Fabrikantnummer:
- S27KL0642DPBHI020
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Memory Size | 64MB | |
| Product Type | SDRAM | |
| Data Bus Width | 8bit | |
| Number of Bits per Word | 16 | |
| Maximum Clock Frequency | 200MHz | |
| Mount Type | Surface | |
| Package Type | FBGA-24 Ball | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 24 | |
| Maximum Operating Temperature | 105°C | |
| Length | 6mm | |
| Standards/Approvals | No | |
| Series | S27K | |
| Width | 8mm | |
| Height | 1mm | |
| Minimum Supply Voltage | 1.8V | |
| Maximum Supply Voltage | 3.6V | |
| Supply Current | 360μA | |
| Automotive Standard | AEC-Q100 Grade 2 & 3 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Memory Size 64MB | ||
Product Type SDRAM | ||
Data Bus Width 8bit | ||
Number of Bits per Word 16 | ||
Maximum Clock Frequency 200MHz | ||
Mount Type Surface | ||
Package Type FBGA-24 Ball | ||
Minimum Operating Temperature -40°C | ||
Pin Count 24 | ||
Maximum Operating Temperature 105°C | ||
Length 6mm | ||
Standards/Approvals No | ||
Series S27K | ||
Width 8mm | ||
Height 1mm | ||
Minimum Supply Voltage 1.8V | ||
Maximum Supply Voltage 3.6V | ||
Supply Current 360μA | ||
Automotive Standard AEC-Q100 Grade 2 & 3 | ||
The Infineon DRAM is a high speed CMOS, self refresh DRAM, with HYPERBUS interface. The DRAM array uses dynamic cells that require periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM array when the memory is not being actively read or written by the HYPERBUS interface master. Since the host is not required to manage any refresh operations, the DRAM array appears to the host as though the memory uses static cells that retain data without refresh. Hence, the memory is more accurately described as Pseudo Static RAM.
200 MHz maximum clock rate
Data throughput up to 400 MBps
Bidirectional read write data strobe
Automotive AEC Q100 Grade 2 and 3
Optional DDR centre aligned read strobe
DDR transfers data on both edges of the clock
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