Infineon Silicon Junction, Single, 15 A, 3-Pin 650 V TO-247 IDW15E65D2FKSA1
- RS-stocknr.:
- 218-4370
- Fabrikantnummer:
- IDW15E65D2FKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 10,81
(excl. BTW)
€ 13,08
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 260 stuk(s) vanaf 05 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 10 | € 1,081 | € 10,81 |
| 20 - 40 | € 1,027 | € 10,27 |
| 50 - 90 | € 0,973 | € 9,73 |
| 100 - 240 | € 0,908 | € 9,08 |
| 250 + | € 0,844 | € 8,44 |
*prijsindicatie
- RS-stocknr.:
- 218-4370
- Fabrikantnummer:
- IDW15E65D2FKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Silicon Junction | |
| Diode Configuration | Single | |
| Maximum Forward Current If | 15A | |
| Sub Type | Silicon Junction | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 85.7W | |
| Peak Reverse Recovery Time trr | 30ns | |
| Maximum Forward Voltage Vf | 1.6V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Maximum Operating Temperature | 175°C | |
| Length | 16.13mm | |
| Height | 41.42mm | |
| Width | 5.21 mm | |
| Series | IDW15E65D2 | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Silicon Junction | ||
Diode Configuration Single | ||
Maximum Forward Current If 15A | ||
Sub Type Silicon Junction | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 85.7W | ||
Peak Reverse Recovery Time trr 30ns | ||
Maximum Forward Voltage Vf 1.6V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 100A | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Maximum Operating Temperature 175°C | ||
Length 16.13mm | ||
Height 41.42mm | ||
Width 5.21 mm | ||
Series IDW15E65D2 | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon Rapid 2 series switching emitter controller power silicon diode in a TO-247 package is designed for applications switching between 40 kHz and 100 kHz. It has forward current of 30 A.
Lowest reverse recovery charge
Low reverse recovery time
Lowest reverse recovery current to provide lowest turn-on losses on the boost switch
Pb-free lead plating
RoHS compliant
Gerelateerde Links
- Infineon Silicon Junction 15 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 75 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 30 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 40 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 60 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 60 A, 3-Pin 650 V TO-247 IDW30E65D1FKSA1
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247 IDW40E65D2FKSA1