onsemi MUN5212DW1T1G Digital Transistor, 50 V NPN 100 mA Surface SOT-363, 6-Pin
- RS-stocknr.:
- 186-8437
- Fabrikantnummer:
- MUN5212DW1T1G
- Fabrikant:
- onsemi
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 186-8437
- Fabrikantnummer:
- MUN5212DW1T1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | SOT-363 | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Mount Type | Surface | |
| Transistor Configuration | Dual | |
| Maximum Collector Base Voltage VCBO | 50V | |
| Maximum Power Dissipation Pd | 385mW | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 0.25V | |
| Minimum DC Current Gain hFE | 60 | |
| Transistor Polarity | NPN | |
| Maximum Continuous Collector Current Ic | 100mA | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 6 | |
| Standards/Approvals | RoHS, Pb-Free | |
| Height | 1.1mm | |
| Length | 2.2mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Digital Transistor | ||
Package Type SOT-363 | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Mount Type Surface | ||
Transistor Configuration Dual | ||
Maximum Collector Base Voltage VCBO 50V | ||
Maximum Power Dissipation Pd 385mW | ||
Maximum Collector Emitter Saturation Voltage VceSAT 0.25V | ||
Minimum DC Current Gain hFE 60 | ||
Transistor Polarity NPN | ||
Maximum Continuous Collector Current Ic 100mA | ||
Maximum Operating Temperature 150°C | ||
Pin Count 6 | ||
Standards/Approvals RoHS, Pb-Free | ||
Height 1.1mm | ||
Length 2.2mm | ||
Automotive Standard AEC-Q101 | ||
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
These Devices are Pb-Free, Halogen Free/BFR Free
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