Infineon BFR181E6327HTSA1 Bipolar Transistor, 20 mA NPN, 20 V, 3-Pin SOT-23
- RS-stocknr.:
- 258-7710
- Artikelnummer Distrelec:
- 304-40-490
- Fabrikantnummer:
- BFR181E6327HTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 4,15
(excl. BTW)
€ 5,025
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 2.500 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 225 | € 0,166 | € 4,15 |
| 250 - 600 | € 0,158 | € 3,95 |
| 625 - 1225 | € 0,105 | € 2,63 |
| 1250 - 2475 | € 0,102 | € 2,55 |
| 2500 + | € 0,10 | € 2,50 |
*prijsindicatie
- RS-stocknr.:
- 258-7710
- Artikelnummer Distrelec:
- 304-40-490
- Fabrikantnummer:
- BFR181E6327HTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 20mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 70 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 175mW | |
| Maximum Transition Frequency ft | 3GHz | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Operating Temperature | 125°C | |
| Pin Count | 3 | |
| Standards/Approvals | RoHS | |
| Series | BAR63 | |
| Length | 2.9mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 20mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 70 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 175mW | ||
Maximum Transition Frequency ft 3GHz | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Operating Temperature 125°C | ||
Pin Count 3 | ||
Standards/Approvals RoHS | ||
Series BAR63 | ||
Length 2.9mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.
Pb free RoHS compliant package
VCEO max is 12 V
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