Infineon RF Bipolar Transistor, 80 mA NPN, 20 V, 3-Pin SOT-23
- RS-stocknr.:
- 219-5952
- Fabrikantnummer:
- BF771E6327HTSA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 219-5952
- Fabrikantnummer:
- BF771E6327HTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum DC Current Gain hFE | 70 | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 580mW | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 8GHz | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | ESD sensitive device, RoHS | |
| Series | BF771 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum DC Current Gain hFE 70 | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 580mW | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 8GHz | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals ESD sensitive device, RoHS | ||
Series BF771 | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is used for modulators and amplifiers in TV and VCR tuners.
Pb-free (RoHS compliant)
Qualified according AEC Q101
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