Infineon RF Bipolar Transistor, 50 mA NPN, 13 V, 4-Pin SOT-343
- RS-stocknr.:
- 259-1438
- Fabrikantnummer:
- BFP640ESDH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 3000 eenheden)*
€ 552,00
(excl. BTW)
€ 669,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 15 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,184 | € 552,00 |
| 6000 - 6000 | € 0,179 | € 537,00 |
| 9000 + | € 0,175 | € 525,00 |
*prijsindicatie
- RS-stocknr.:
- 259-1438
- Fabrikantnummer:
- BFP640ESDH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Maximum Transition Frequency ft | 70GHz | |
| Minimum Operating Temperature | -65°C | |
| Minimum DC Current Gain hFE | 110 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 200mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Height | 0.9mm | |
| Standards/Approvals | Pb-Free (RoHS) | |
| Length | 2mm | |
| Series | BFP640 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Maximum Transition Frequency ft 70GHz | ||
Minimum Operating Temperature -65°C | ||
Minimum DC Current Gain hFE 110 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 200mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Height 0.9mm | ||
Standards/Approvals Pb-Free (RoHS) | ||
Length 2mm | ||
Series BFP640 | ||
Automotive Standard AEC-Q101 | ||
The Infineon high gain low noise RF transistor provides outstanding performance for a wide range of wireless applications & Ideal for CDMA and WLAN applications.
Gold metallization for extra high reliability
70 GHz fT-Silicon Germanium technology
Pb-free (RoHS compliant) package
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