Infineon BFR360L3E6765XTMA1 RF Bipolar Transistor, 35 mA, 15 V, 3-Pin TSLP-3-1
- RS-stocknr.:
- 261-3955
- Fabrikantnummer:
- BFR360L3E6765XTMA1
- Fabrikant:
- Infineon
Ontvang bulkkorting
Voeg 30000 meer toe om 9% te besparen
Bekijk bulkkortingSubtotaal (1 rol van 15000 eenheden)*
€ 2.730,00
(excl. BTW)
€ 3.300,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 03 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* | Bespaar |
|---|---|---|---|
| 15000 - 15000 | € 0,182 | € 2.730,00 | - |
| 30000 - 30000 | € 0,164 | € 2.460,00 | 9% |
| 45000 + | € 0,148 | € 2.220,00 | 18% |
*prijsindicatie
- RS-stocknr.:
- 261-3955
- Fabrikantnummer:
- BFR360L3E6765XTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSLP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum DC Current Gain hFE | 90 | |
| Maximum Power Dissipation Pd | 210mW | |
| Maximum Transition Frequency ft | 14GHz | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Standards/Approvals | RoHS | |
| Length | 1mm | |
| Series | BFR | |
| Width | 600μm | |
| Height | 400μm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSLP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum DC Current Gain hFE 90 | ||
Maximum Power Dissipation Pd 210mW | ||
Maximum Transition Frequency ft 14GHz | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Standards/Approvals RoHS | ||
Length 1mm | ||
Series BFR | ||
Width 600μm | ||
Height 400μm | ||
Automotive Standard AEC-Q101 | ||
The Infineon low noise silicon bipolar RF transistor with low voltage and low current operation. That Device is having electrostatic discharge sensitive device. It is Pb-free RoHS compliant and halogen-free thin small leadless package.
For low noise amplifiers
Qualification report according to AEC-Q101 available
Gerelateerde Links
- Infineon BFR360L3E6765XTMA1 RF Bipolar Transistor 15 V, 3-Pin TSLP-3-1
- Infineon BFR840L3RHESDE6327XTSA1 RF Bipolar Transistor 2.25 V, 3-Pin TSLP-3-9
- Infineon BFR460L3E6327XTMA1 RF Bipolar Transistor 15 V, 3-Pin TSLP-3-1
- Infineon BGB741L7ESDE6327XTSA1 RF Bipolar Transistor 7-Pin TSLP-7-1
- Infineon BFR740L3RHE6327XTSA1 NPN RF Bipolar Transistor 4 V, 4-Pin TSLP
- Infineon RF Bipolar Transistor 15 V, 3-Pin TSFP-3-1
- Infineon BFR380L3E6327XTMA1 Bipolar Transistor 15 V, 3-Pin TSLP-3-1
- Infineon BFR360FH6765XTSA1 RF Bipolar Transistor 15 V, 3-Pin TSFP-3-1