Infineon BFR460L3E6327XTMA1 RF Bipolar Transistor, 50 mA NPN, 15 V, 3-Pin TSLP-3-1
- RS-stocknr.:
- 261-3958
- Artikelnummer Distrelec:
- 304-41-647
- Fabrikantnummer:
- BFR460L3E6327XTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 50 eenheden)*
€ 21,05
(excl. BTW)
€ 25,45
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 15.000 stuk(s) vanaf 02 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 50 | € 0,421 | € 21,05 |
| 100 - 100 | € 0,379 | € 18,95 |
| 150 - 200 | € 0,341 | € 17,05 |
| 250 - 450 | € 0,306 | € 15,30 |
| 500 + | € 0,276 | € 13,80 |
*prijsindicatie
- RS-stocknr.:
- 261-3958
- Artikelnummer Distrelec:
- 304-41-647
- Fabrikantnummer:
- BFR460L3E6327XTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSLP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum DC Current Gain hFE | 90 | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 22GHz | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 200mW | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 400μm | |
| Standards/Approvals | RoHS | |
| Width | 600μm | |
| Series | BFR | |
| Length | 1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSLP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum DC Current Gain hFE 90 | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 22GHz | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 200mW | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 400μm | ||
Standards/Approvals RoHS | ||
Width 600μm | ||
Series BFR | ||
Length 1mm | ||
Automotive Standard No | ||
The Infineon low profile silicon NPN RF bipolar transistor with low noise device based on a grounded emitter. Its transition frequency of 22 GHz, low current and low voltage characteristics make the device suitable for amplifiers. It remains cost competitive without compromising on ease of use.
High ESD performance
High gain with minimum noise figure
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