Infineon RF Bipolar Transistor, 20 mA, 20 V, 3-Pin SOT-323
- RS-stocknr.:
- 273-7303
- Fabrikantnummer:
- BFR181WH6327XTSA1
- Fabrikant:
- Infineon
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- Plus verzending 2.425 stuk(s) vanaf 16 november 2026
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Aantal stuks | Per stuk | Per verpakking* | Bespaar |
|---|---|---|---|
| 25 - 25 | € 0,28 | € 7,00 | - |
| 50 - 75 | € 0,275 | € 6,88 | 1% |
| 100 - 225 | € 0,269 | € 6,73 | 3% |
| 250 - 975 | € 0,265 | € 6,63 | 5% |
| 1000 + | € 0,113 | € 2,83 | 59% |
*prijsindicatie
- RS-stocknr.:
- 273-7303
- Fabrikantnummer:
- BFR181WH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 20mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum DC Current Gain hFE | 70 | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Transition Frequency ft | 8GHz | |
| Maximum Power Dissipation Pd | 175mW | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Pb-Free (RoHS) | |
| Series | BFR181W | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 20mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum DC Current Gain hFE 70 | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Transition Frequency ft 8GHz | ||
Maximum Power Dissipation Pd 175mW | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Pb-Free (RoHS) | ||
Series BFR181W | ||
Automotive Standard AEC-Q101 | ||
The Infineon Silicon Bipolar RF Transistor is designed for low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This RF transistor has qualification report according to AEC Q101.
Easy to use
Halogen free
Pb free package
RoHS compliant
With visible leads
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