Infineon RF Bipolar Transistor, 80 mA NPN, 20 V, 3-Pin SOT-323
- RS-stocknr.:
- 259-1455
- Fabrikantnummer:
- BFR193WH6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 3000 eenheden)*
€ 309,00
(excl. BTW)
€ 375,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 9.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,103 | € 309,00 |
*prijsindicatie
- RS-stocknr.:
- 259-1455
- Fabrikantnummer:
- BFR193WH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 8GHz | |
| Maximum Power Dissipation Pd | 580mW | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 70 | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.1mm | |
| Height | 0.9mm | |
| Series | BFR193W | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 8GHz | ||
Maximum Power Dissipation Pd 580mW | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 70 | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 2.1mm | ||
Height 0.9mm | ||
Series BFR193W | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor. It is various applications like cellular and Cordless phones, DECT, Tuners, FM, and RF modems.
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT 8 GHz, NFmin 1 dB at 900 MHz
Pb-free (RoHS compliant) package
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