onsemi MJD210T4G Transistor, -5 A PNP, -25 V, 4-Pin DPAK
- RS-stocknr.:
- 790-5334
- Fabrikantnummer:
- MJD210T4G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
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€ 4,58
(excl. BTW)
€ 5,54
(incl. BTW)
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,458 | € 4,58 |
| 100 - 240 | € 0,396 | € 3,96 |
| 250 - 490 | € 0,343 | € 3,43 |
| 500 - 990 | € 0,301 | € 3,01 |
| 1000 + | € 0,274 | € 2,74 |
*prijsindicatie
- RS-stocknr.:
- 790-5334
- Fabrikantnummer:
- MJD210T4G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -5A | |
| Maximum Collector Emitter Voltage Vceo | -25V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 40V dc | |
| Maximum Power Dissipation Pd | 12.5W | |
| Maximum Transition Frequency ft | 10MHz | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 8V | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 10 | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.38mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Series | MJD210 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -5A | ||
Maximum Collector Emitter Voltage Vceo -25V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 40V dc | ||
Maximum Power Dissipation Pd 12.5W | ||
Maximum Transition Frequency ft 10MHz | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 8V | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 10 | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Height 2.38mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Series MJD210 | ||
Automotive Standard AEC-Q101 | ||
The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.
Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc
Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc
High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
These Devices are Pb-Free
MJD200 is the complementary NPN device
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