Infineon 2 MB SPI FRAM 8-Pin SOIC
- RS-stocknr.:
- 188-5423
- Fabrikantnummer:
- FM25V20A-G
- Fabrikant:
- Infineon
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 188-5423
- Fabrikantnummer:
- FM25V20A-G
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Memory Size | 2MB | |
| Product Type | FRAM | |
| Organisation | 256k x 8 Bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 16ns | |
| Maximum Clock Frequency | 40MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Height | 1.38mm | |
| Length | 4.97mm | |
| Width | 3.98 mm | |
| Standards/Approvals | No | |
| Maximum Operating Temperature | 85°C | |
| Maximum Supply Voltage | 3.6V | |
| Number of Bits per Word | 8 | |
| Number of Words | 256K | |
| Minimum Supply Voltage | 2V | |
| Automotive Standard | AEC-Q100 | |
| Minimum Operating Temperature | -40°C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Memory Size 2MB | ||
Product Type FRAM | ||
Organisation 256k x 8 Bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 16ns | ||
Maximum Clock Frequency 40MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Height 1.38mm | ||
Length 4.97mm | ||
Width 3.98 mm | ||
Standards/Approvals No | ||
Maximum Operating Temperature 85°C | ||
Maximum Supply Voltage 3.6V | ||
Number of Bits per Word 8 | ||
Number of Words 256K | ||
Minimum Supply Voltage 2V | ||
Automotive Standard AEC-Q100 | ||
Minimum Operating Temperature -40°C | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Gerelateerde Links
- Infineon 2 MB SPI FRAM 8-Pin SOIC, FM25V20A-G
- Infineon 2 MB SPI FRAM 8-Pin DFN
- Infineon 1 MB SPI FRAM 8-Pin SOIC
- Infineon 2 MB SPI FRAM 8-Pin DFN, FM25V20A-DGQ
- Infineon 2 MB SPI FRAM 8-Pin DFN, FM25V20A-DG
- Infineon 1 MB SPI FRAM 8-Pin SOIC, FM25VN10-G
- Infineon 1 MB SPI FRAM 8-Pin SOIC, FM25V10-G
- Infineon 8 MB Serial-SPI FRAM 8-Pin SOIC