Infineon 2ED2183S06FXUMA1 MOSFET Gate Driver 2, 2.5 A 8-Pin 20 V, DSO
- RS-stocknr.:
- 226-6031
- Fabrikantnummer:
- 2ED2183S06FXUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 8,52
(excl. BTW)
€ 10,31
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Plus verzending 2.485 stuk(s) vanaf 03 juni 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 1,704 | € 8,52 |
| 25 - 45 | € 1,448 | € 7,24 |
| 50 - 120 | € 1,346 | € 6,73 |
| 125 - 245 | € 1,262 | € 6,31 |
| 250 + | € 1,16 | € 5,80 |
*prijsindicatie
- RS-stocknr.:
- 226-6031
- Fabrikantnummer:
- 2ED2183S06FXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Output Current | 2.5A | |
| Pin Count | 8 | |
| Package Type | DSO | |
| Fall Time | 30ns | |
| Driver Type | MOSFET | |
| Rise Time | 15ns | |
| Minimum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | 2ED2183S06F | |
| Height | 1.72mm | |
| Standards/Approvals | No | |
| Length | 4.9mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Output Current 2.5A | ||
Pin Count 8 | ||
Package Type DSO | ||
Fall Time 30ns | ||
Driver Type MOSFET | ||
Rise Time 15ns | ||
Minimum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series 2ED2183S06F | ||
Height 1.72mm | ||
Standards/Approvals No | ||
Length 4.9mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon 2ED2183S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 650 V
Maximum bootstrap voltage (VB node) of + 675 V
Integrated ultra-fast, low resistance bootstrap diode
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