Infineon, Gate Driver 2, 2.5 A 14-Pin 25 V, DSO
- RS-stocknr.:
- 258-0612
- Fabrikantnummer:
- 2ED2184S06FXUMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2500 eenheden)*
€ 2.005,00
(excl. BTW)
€ 2.425,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 15 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,802 | € 2.005,00 |
*prijsindicatie
- RS-stocknr.:
- 258-0612
- Fabrikantnummer:
- 2ED2184S06FXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 2.5A | |
| Pin Count | 14 | |
| Fall Time | 15ns | |
| Package Type | DSO | |
| Driver Type | Gate Driver | |
| Rise Time | 600ns | |
| Minimum Supply Voltage | 10V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | 2ED2184 (4) S06F (J) | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Gate Driver | ||
Output Current 2.5A | ||
Pin Count 14 | ||
Fall Time 15ns | ||
Package Type DSO | ||
Driver Type Gate Driver | ||
Rise Time 600ns | ||
Minimum Supply Voltage 10V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series 2ED2184 (4) S06F (J) | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 650 V half-bridge high current, and high speed gate driver for MOSFET and IGBT, with typical 2.5 A sink and source current in DSO-8 package. Based on Infineon SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Negative VS transient immunity of 100 V
Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
Floating channel designed for bootstrap operation
Integrated shoot-through protection with built-in dead time (400 ns)
Maximum supply voltage of 25 V
50% lower level-shift losses
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