Renesas Electronics MOSFET Gate Driver, 1.69 mA 10-Pin 100 V, SOIC
- RS-stocknr.:
- 264-3549
- Fabrikantnummer:
- HIP2210FRTZ
- Fabrikant:
- Renesas Electronics
Bulkkorting beschikbaar
Subtotaal (1 tube van 750 eenheden)*
€ 1.032,75
(excl. BTW)
€ 1.249,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 28 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 750 - 2250 | € 1,377 | € 1.032,75 |
| 3000 + | € 1,338 | € 1.003,50 |
*prijsindicatie
- RS-stocknr.:
- 264-3549
- Fabrikantnummer:
- HIP2210FRTZ
- Fabrikant:
- Renesas Electronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Renesas Electronics | |
| Product Type | Gate Driver Module | |
| Output Current | 1.69mA | |
| Pin Count | 10 | |
| Fall Time | 790ns | |
| Package Type | SOIC | |
| Driver Type | MOSFET | |
| Rise Time | 20ns | |
| Minimum Supply Voltage | 100V | |
| Maximum Supply Voltage | 100V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.75mm | |
| Standards/Approvals | RoHS | |
| Series | HIP2210 | |
| Length | 5mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Renesas Electronics | ||
Product Type Gate Driver Module | ||
Output Current 1.69mA | ||
Pin Count 10 | ||
Fall Time 790ns | ||
Package Type SOIC | ||
Driver Type MOSFET | ||
Rise Time 20ns | ||
Minimum Supply Voltage 100V | ||
Maximum Supply Voltage 100V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 1.75mm | ||
Standards/Approvals RoHS | ||
Series HIP2210 | ||
Length 5mm | ||
Width 4 mm | ||
Automotive Standard No | ||
The Renesas Electronics high-frequency half-bridge NMOS FET drivers. This is a tri-level PWM input with programmable dead time. Its wide operating supply range of 6V to
18V and integrated high-side bootstrap diodecsupports driving the high-side and low-side NMOS in 100V half-bridge applications.
Integrated 0.5Ω typical bootstrap diode
Robust noise tolerance
VDD and boot undervoltage lockout
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