onsemi NFAM3065L4BL, Type N-Channel 3 Phase IGBT, 30 A 650 V, 39-Pin DIP-39, Through Hole

Bekijk alle IGBTs
Bulkkorting beschikbaar

Subtotaal (1 eenheid)*

€ 38,09

(excl. BTW)

€ 46,09

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 90 stuk(s) vanaf 23 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
1 - 9€ 38,09
10 - 99€ 34,28
100 +€ 31,62

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
277-038
Fabrikantnummer:
NFAM3065L4BL
Fabrikant:
onsemi
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

onsemi

Product Type

IGBT

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

650V

Number of Transistors

6

Maximum Power Dissipation Pd

113W

Configuration

3 Phase

Package Type

DIP-39

Mount Type

Through Hole

Channel Type

Type N

Pin Count

39

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Height

5.6mm

Width

31 mm

Standards/Approvals

Pb-Free, UL1557 (File No.339285), RoHS

Length

54.5mm

Automotive Standard

No

Land van herkomst:
VN
The ON Semiconductor Integrated Inverter Power Module features a high-side gate driver, LVIC, six IGBTs, and a temperature sensor (VTS), making it ideal for driving PMSM, BLDC, and AC asynchronous motors. The IGBTs are arranged in a three-phase bridge with separate emitter connections for the lower legs, allowing maximum flexibility in control algorithm selection.

Active logic interface

Built in undervoltage protection

Integrated bootstrap diodes and resistors

Separate low side IGBT emitter connections for individual current sensing of each phase

Gerelateerde Links

Recently viewed