onsemi NFAM3065L4BL 3 Phase IGBT, 30 A 650 V, 39-Pin DIP39, Through Hole
- RS-stocknr.:
- 277-038
- Fabrikantnummer:
- NFAM3065L4BL
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 38,09
(excl. BTW)
€ 46,09
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 90 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 38,09 |
| 10 - 99 | € 34,28 |
| 100 + | € 31,62 |
*prijsindicatie
- RS-stocknr.:
- 277-038
- Fabrikantnummer:
- NFAM3065L4BL
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation | 113 W | |
| Configuration | 3 Phase | |
| Package Type | DIP39 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 39 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation 113 W | ||
Configuration 3 Phase | ||
Package Type DIP39 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 39 | ||
- Land van herkomst:
- VN
The ON Semiconductor Integrated Inverter Power Module features a high-side gate driver, LVIC, six IGBTs, and a temperature sensor (VTS), making it ideal for driving PMSM, BLDC, and AC asynchronous motors. The IGBTs are arranged in a three-phase bridge with separate emitter connections for the lower legs, allowing maximum flexibility in control algorithm selection.
Active logic interface
Built in undervoltage protection
Integrated bootstrap diodes and resistors
Separate low side IGBT emitter connections for individual current sensing of each phase
Built in undervoltage protection
Integrated bootstrap diodes and resistors
Separate low side IGBT emitter connections for individual current sensing of each phase
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