onsemi AFGB40T65SQDN, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-263, Surface

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€ 7,78

(excl. BTW)

€ 9,42

(incl. BTW)

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2 +€ 3,89€ 7,78

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Verpakkingsopties
RS-stocknr.:
185-8642
Fabrikantnummer:
AFGB40T65SQDN
Fabrikant:
onsemi
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Merk

onsemi

Product Type

IGBT

Maximum Continuous Collector Current Ic

80A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

238W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, Pb-Free

Height

4.06mm

Length

9.65mm

Width

10.67 mm

Automotive Standard

AEC-Q101

Energy Rating

22.3mJ

Niet conform

Land van herkomst:
CN
Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.

VCE(sat) = 1.6 V (typ.) @ IC = 40 A

Low VF soft recovery co-packaged diode

For automotive

Low conduction loss

Low noise and conduction loss

Applications

Automotive On Board Charge

Automotive DC/DC converter for HEV

End Products

EV/PHEV

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