onsemi, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-263, Surface
- RS-stocknr.:
- 185-7972
- Fabrikantnummer:
- AFGB40T65SQDN
- Fabrikant:
- onsemi
Subtotaal (1 rol van 800 eenheden)*
€ 1.987,20
(excl. BTW)
€ 2.404,80
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tekort aan aanbod
Wegens beperkingen in de bevoorradingsketen worden de voorraden toegewezen naarmate zij beschikbaar komen.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 800 + | € 2,484 | € 1.987,20 |
*prijsindicatie
- RS-stocknr.:
- 185-7972
- Fabrikantnummer:
- AFGB40T65SQDN
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 238W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Pb-Free | |
| Length | 9.65mm | |
| Height | 4.06mm | |
| Energy Rating | 22.3mJ | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 238W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Pb-Free | ||
Length 9.65mm | ||
Height 4.06mm | ||
Energy Rating 22.3mJ | ||
Automotive Standard AEC-Q101 | ||
Niet conform
- Land van herkomst:
- CN
Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.
VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Low VF soft recovery co-packaged diode
For automotive
Low conduction loss
Low noise and conduction loss
Applications
Automotive On Board Charge
Automotive DC/DC converter for HEV
End Products
EV/PHEV