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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	IGBT Module
	Maximum Continuous Collector Current Ic	35A
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	20mW
	Package Type	DIP-26
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	26
	Maximum Gate Emitter Voltage VGEO	±2 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.4V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Height	8mm
	Length	73mm
	Width	40 mm
	Series	CIB
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Product Type IGBT Module
	Maximum Continuous Collector Current Ic 35A
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 20mW
	Package Type DIP-26
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 26
	Maximum Gate Emitter Voltage VGEO ±2 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.4V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Height 8mm
	Length 73mm
	Width 40 mm
	Series CIB
	Standards/Approvals No
	Automotive Standard No

Datasheet - NXH35C120L2C2SG

The ON Semiconductor transfer molded power module containing a converter-inverter-brake circuit consisting of six 35 Ampere and 1600 Volts rectifiers, six 35 Ampere and 1200 Volts IGBTs with inverse diodes, one 35 Ampere and 1200 Volts brake IGBT with brake diode and an NTC thermistor.

Low thermal resistance

6mm clearance distance between pin to heatsink

Solderable pins

Thermistor

Pb free

Halogen free or BFR free

RoHS compliant

onsemi NXH35C120L2C2SG, Type N-Channel IGBT Module, 35 A 650 V, 26-Pin DIP-26, Through Hole

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