Infineon IKQ120N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 160 A 650 V, 3-Pin PG-TO247-3-PLUS-N,

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RS-stocknr.:
284-989
Fabrikantnummer:
IKQ120N65EH7XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

498 W

Number of Transistors

1

Package Type

PG-TO247-3-PLUS-N

Configuration

Single Collector, Single Emitter, Single Gate

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

The Infineon IGBT with Advanced power semiconductor revolutionises efficiency in various applications with its high speed capabilities and low saturation voltage. Designed with the renowned 650 V TRENCHSTOP IGBT7 technology, it excels in hard switching topologies, making it Ideal for industrial UPS systems, EV charging solutions, and string inverters. This robust component is qualified under stringent industrial standards, ensuring reliability and longevity in demanding environments.

Utilizes trench technology for efficiency

Minimizes switching losses for performance

Engineered for reliability in high humidity

Smooth switching characteristics for precision

Designed for versatile power electronics use

Qualified for industrial applications per JEDEC

Supports device lifespan with thermal management

Provides simulation capabilities with PSpice models

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