Infineon IKWH50N65EH7XKSA1, Type N-Channel IGBT 650 V, 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole

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Verpakkingsopties
RS-stocknr.:
285-013
Fabrikantnummer:
IKWH50N65EH7XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

249W

Package Type

PG-TO-247-3-STD-NN4.8

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

40°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Length

20.1mm

Height

5.1mm

Standards/Approvals

No

Width

15.9 mm

Automotive Standard

No

The Infineon IGBT is a sophisticated high speed IGBT designed to deliver impressive performance in demanding applications. Utilising Advanced trench stop technology, this 650V device offers significantly reduced switching losses and an ultra low collector emitter saturation voltage. Its robust design ensures exceptional reliability, making it an Ideal choice for energy efficient systems, such as industrial UPS and electric vehicle charging solutions. With excellent thermal management characteristics and a compliance with stringent JEDEC standards, this device stands out for its versatility and durability in various applications.

Low switching losses improve efficiency

Humidity robustness for reliable operation

Optimized for two and three level topologies

Soft and fast recovery diode enhances performance

Validated to industrial standards for reliability

Comprehensive product spectrum and PSpice models

High collector current for demanding applications

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