Infineon IKWH40N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 80 A 650 V, 3-Pin PG-TO247-3-STD-NN4.8,

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Subtotaal (1 tube van 30 eenheden)*

€ 101,61

(excl. BTW)

€ 122,94

(incl. BTW)

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30 - 90€ 3,387€ 101,61
120 +€ 3,218€ 96,54

*prijsindicatie

RS-stocknr.:
285-008
Fabrikantnummer:
IKWH40N65EH7XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

208 W

Number of Transistors

1

Package Type

PG-TO247-3-STD-NN4.8

Configuration

Single Collector, Single Emitter, Single Gate

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

The Infineon IGBT is a cutting edge IGBT module, utilising TRENCHSTOP IGBT7 technology for exceptional performance in high speed applications with low saturation voltage. Designed with a collector emitter voltage rating of 650 V, this module ensures enhanced efficiency and minimal energy loss, making it Ideal for demanding industrial environments. With its robust package and optimised thermal properties, this module offers outstanding robustness against humidity, ensuring consistent operation across various conditions.

High speed operation for efficient energy management

Low collector emitter saturation voltage boosts performance

Soft recovery diode ensures gentle switching

Humidity resistant design for reliability in diverse conditions

Optimized for two and three level topologies

Comprehensive product spectrum for tailored solutions

Qualified for industrial applications per rigorous JEDEC standards

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