onsemi, Type N-Channel IGBT, 80 A 600 V, 3-Pin TO-3PF, Through Hole
- RS-stocknr.:
- 124-1396
- Fabrikantnummer:
- FGAF40N60SMD
- Fabrikant:
- onsemi
Subtotaal (1 tube van 30 eenheden)*
€ 93,45
(excl. BTW)
€ 113,07
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 180 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 + | € 3,115 | € 93,45 |
*prijsindicatie
- RS-stocknr.:
- 124-1396
- Fabrikantnummer:
- FGAF40N60SMD
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 115W | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | Field Stop | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 115W | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series Field Stop | ||
Automotive Standard No | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Gerelateerde Links
- onsemi FGAF40N60SMD IGBT 3-Pin TO-3PF, Through Hole
- onsemi FGAF40N60UFTU IGBT 3-Pin TO-3PF, Through Hole
- onsemi FGAF40S65AQ IGBT 3-Pin TO-3PF, Through Hole
- STMicroelectronics STGFW30V60DF IGBT 3-Pin TO-3PF, Through Hole
- onsemi FGH40N60SMD IGBT 3-Pin TO-247, Through Hole
- onsemi FGH40N60SFDTU IGBT 3-Pin TO-247, Through Hole
- onsemi FGH40N60UFDTU IGBT 3-Pin TO-247, Through Hole
- onsemi FGH40N60SMDF IGBT 3-Pin TO-247AB, Through Hole