onsemi FGAF40N60UFTU, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole

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Verpakkingsopties
RS-stocknr.:
759-9257
Fabrikantnummer:
FGAF40N60UFTU
Fabrikant:
onsemi
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Maximum Continuous Collector Current Ic

40A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

100W

Package Type

TO-3PF

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

130ns

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

5.45mm

Length

26.5mm

Series

UF

Standards/Approvals

AEC, RoHS

Automotive Standard

No

Land van herkomst:
CN

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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