onsemi FGAF40N60UFTU, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole
- RS-stocknr.:
- 759-9257
- Fabrikantnummer:
- FGAF40N60UFTU
- Fabrikant:
- onsemi
Subtotaal (1 eenheid)*
€ 1,25
(excl. BTW)
€ 1,51
(incl. BTW)
Voeg 60 eenheden toe voor gratis bezorging
Laatste voorraad RS
- 1 stuk(s) klaar voor verzending vanaf een andere locatie
- Laatste verzending 638 stuk(s) vanaf 26 februari 2026
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 1,25 |
*prijsindicatie
- RS-stocknr.:
- 759-9257
- Fabrikantnummer:
- FGAF40N60UFTU
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 100W | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 130ns | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC, RoHS | |
| Series | UF | |
| Height | 5.45mm | |
| Length | 26.5mm | |
| Width | 23 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 100W | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 130ns | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC, RoHS | ||
Series UF | ||
Height 5.45mm | ||
Length 26.5mm | ||
Width 23 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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