onsemi, N-Channel IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole
- RS-stocknr.:
- 185-7999
- Fabrikantnummer:
- FGAF40S65AQ
- Fabrikant:
- onsemi
Subtotaal (1 tube van 360 eenheden)*
€ 685,80
(excl. BTW)
€ 829,80
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 360 stuk(s) vanaf 21 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 360 + | € 1,905 | € 685,80 |
*prijsindicatie
- RS-stocknr.:
- 185-7999
- Fabrikantnummer:
- FGAF40S65AQ
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 94W | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 19.1mm | |
| Series | Trench | |
| Width | 15.3mm | |
| Standards/Approvals | Pb-Free and is RoHS | |
| Energy Rating | 325mJ | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 94W | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 19.1mm | ||
Series Trench | ||
Width 15.3mm | ||
Standards/Approvals Pb-Free and is RoHS | ||
Energy Rating 325mJ | ||
Automotive Standard No | ||
Niet conform
- Land van herkomst:
- KR
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.
Maximum junction temperature : TJ = 175°C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application