onsemi FGAF40S65AQ, N-Channel IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole
- RS-stocknr.:
- 185-8956
- Fabrikantnummer:
- FGAF40S65AQ
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
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€ 11,259
(excl. BTW)
€ 13,623
(incl. BTW)
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- Verzending 501 stuk(s) vanaf 21 september 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 3 - 27 | € 3,753 | € 11,26 |
| 30 + | € 3,237 | € 9,71 |
*prijsindicatie
- RS-stocknr.:
- 185-8956
- Fabrikantnummer:
- FGAF40S65AQ
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 94W | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free and is RoHS | |
| Width | 15.3mm | |
| Length | 19.1mm | |
| Series | Trench | |
| Energy Rating | 325mJ | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 94W | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free and is RoHS | ||
Width 15.3mm | ||
Length 19.1mm | ||
Series Trench | ||
Energy Rating 325mJ | ||
Automotive Standard No | ||
Niet conform
- Land van herkomst:
- KR
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.
Maximum junction temperature : TJ = 175°C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application