onsemi NGTB30N120LWG IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole

Bekijk alle IGBTs
Bulkkorting beschikbaar

Subtotaal (1 tube van 30 eenheden)*

€ 134,79

(excl. BTW)

€ 163,11

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks
Per stuk
Per tube*
30 - 30€ 4,493€ 134,79
60 - 120€ 4,327€ 129,81
150 - 270€ 4,16€ 124,80
300 - 570€ 3,757€ 112,71
600 +€ 3,332€ 99,96

*prijsindicatie

RS-stocknr.:
124-5386
Fabrikantnummer:
NGTB30N120LWG
Fabrikant:
onsemi
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

onsemi

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

260 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.3 x 21.08mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Land van herkomst:
CN

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.


IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Gerelateerde Links