IXYS IXXK110N65B4H1, N-Channel IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole
- RS-stocknr.:
- 125-8051
- Fabrikantnummer:
- IXXK110N65B4H1
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
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€ 21,66
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€ 26,21
(incl. BTW)
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- Verzending 273 stuk(s) vanaf 16 oktober 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 21,66 |
| 2 - 4 | € 19,43 |
| 5 - 9 | € 18,46 |
| 10 - 24 | € 17,57 |
| 25 + | € 16,66 |
*prijsindicatie
- RS-stocknr.:
- 125-8051
- Fabrikantnummer:
- IXXK110N65B4H1
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 570A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 880W | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 30kHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Operating Temperature | 175°C | |
| Series | Trench | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Energy Rating | 3mJ | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 570A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 880W | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 30kHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Operating Temperature 175°C | ||
Series Trench | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Energy Rating 3mJ | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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