IXYS, Type N-Channel IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole
- RS-stocknr.:
- 168-4588
- Fabrikantnummer:
- IXXK110N65B4H1
- Fabrikant:
- IXYS
Subtotaal (1 tube van 25 eenheden)*
€ 396,45
(excl. BTW)
€ 479,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 275 stuk(s) vanaf 16 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 25 + | € 15,858 | € 396,45 |
*prijsindicatie
- RS-stocknr.:
- 168-4588
- Fabrikantnummer:
- IXXK110N65B4H1
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Maximum Continuous Collector Current Ic | 570A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 880W | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 30kHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | Trench | |
| Energy Rating | 3mJ | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Maximum Continuous Collector Current Ic 570A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 880W | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 30kHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series Trench | ||
Energy Rating 3mJ | ||
Automotive Standard No | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Gerelateerde Links
- IXYS IXXK110N65B4H1 IGBT 3-Pin TO-264, Through Hole
- IXYS IXXK100N60C3H1 IGBT 3-Pin TO-264, Through Hole
- IXYS IXXH80N65B4H1 IGBT 3-Pin TO-247AD, Through Hole
- IXYS 100 A 1200 V Through Hole
- IXYS IXYK100N120C3 100 A 1200 V Through Hole
- IXYS IXGH40N120B2D1 IGBT 3-Pin TO-247, Through Hole
- IXYS IXGH16N170 IGBT 3-Pin TO-247AD, Through Hole
- IXYS IXA20I1200PB IGBT 3-Pin TO-220, Through Hole