IXYS, Type N-Channel IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole

Bekijk alle IGBTs

Subtotaal (1 tube van 25 eenheden)*

€ 396,45

(excl. BTW)

€ 479,70

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks
Per stuk
Per tube*
25 +€ 15,858€ 396,45

*prijsindicatie

RS-stocknr.:
168-4588
Fabrikantnummer:
IXXK110N65B4H1
Fabrikant:
IXYS
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

IXYS

Product Type

IGBT

Maximum Continuous Collector Current Ic

570A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

880W

Package Type

TO-264

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

30kHz

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Series

Trench

Standards/Approvals

No

Automotive Standard

No

Energy Rating

3mJ

IGBT Discretes, IXYS


IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Gerelateerde Links