Toshiba GT15J341, N-Channel IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole
- RS-stocknr.:
- 168-7763
- Fabrikantnummer:
- GT15J341
- Fabrikant:
- Toshiba
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 168-7763
- Fabrikantnummer:
- GT15J341
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Channel Type | N | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current (Ic) | 15 A | |
| Maximum Collector Emitter Voltage (Vceo) | 600 V | |
| Pin Count | 3 | |
| Package Type | TO-220SIS | |
| Mount Type | Through Hole | |
| Maximum Gate Emitter Voltage (VGEO) | 25 V | |
| Maximum Operating Temperature | 150 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Channel Type N | ||
Product Type IGBT | ||
Maximum Continuous Collector Current (Ic) 15 A | ||
Maximum Collector Emitter Voltage (Vceo) 600 V | ||
Pin Count 3 | ||
Package Type TO-220SIS | ||
Mount Type Through Hole | ||
Maximum Gate Emitter Voltage (VGEO) 25 V | ||
Maximum Operating Temperature 150 °C | ||
- Land van herkomst:
- JP
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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