Vishay SUM70060E-GE3, Type N-Channel IGBT, 3-Pin TO-263, Surface

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Subtotaal (1 verpakking van 5 eenheden)*

€ 14,88

(excl. BTW)

€ 18,005

(incl. BTW)

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  • Laatste 5 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks
Per stuk
Per verpakking*
5 - 45€ 2,976€ 14,88
50 - 120€ 2,678€ 13,39
125 - 245€ 2,38€ 11,90
250 - 495€ 2,174€ 10,87
500 +€ 1,934€ 9,67

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
180-8025
Fabrikantnummer:
SUM70060E-GE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

IGBT

Maximum Power Dissipation Pd

375W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Length

15.875mm

Standards/Approvals

RoHS

Series

ThunderFET

Automotive Standard

No

Energy Rating

125mJ

Land van herkomst:
CN

Vishay MOSFET


The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.6mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen and lead (Pb) free component

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Applications


• AC/DC switch-mode power supplies

• Battery management

• DC/AC inverters

• DC/DC converters

• Lighting

• Motor drive switches

• Synchronous rectifier

• Uninterruptible power supplies

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