Vishay SIHG47N60EF-GE3, Type N-Channel IGBT, 3-Pin TO-247AC
- RS-stocknr.:
- 180-7913
- Fabrikantnummer:
- SIHG47N60EF-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 8,58
(excl. BTW)
€ 10,38
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 34 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 8,58 |
| 10 - 24 | € 8,34 |
| 25 - 49 | € 7,90 |
| 50 - 99 | € 7,55 |
| 100 + | € 7,12 |
*prijsindicatie
- RS-stocknr.:
- 180-7913
- Fabrikantnummer:
- SIHG47N60EF-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | IGBT | |
| Maximum Power Dissipation Pd | 379W | |
| Package Type | TO-247AC | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 15.87 mm | |
| Length | 16.25mm | |
| Standards/Approvals | RoHS | |
| Series | EF | |
| Automotive Standard | No | |
| Energy Rating | 1500mJ | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type IGBT | ||
Maximum Power Dissipation Pd 379W | ||
Package Type TO-247AC | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 15.87 mm | ||
Length 16.25mm | ||
Standards/Approvals RoHS | ||
Series EF | ||
Automotive Standard No | ||
Energy Rating 1500mJ | ||
- Land van herkomst:
- CN
The Vishay SIHG47N60EF is a N-channel EF series power MOSFET with fast body diode having drain to source voltage(Vds) of 600V and gate to source voltage (VGS) 30V. It is having TO-247AC package. It is offers drain to source resistance (RDS.) of 0.065ohms at 10VGS. Maximum drain current 47A.
Fast body diode MOSFET using E series technology
Reduced trr, Qrr, and IRRM
Low figure of merit (FOM) Ron x Qg