STMicroelectronics STGWA30H65DFB2, Type N-Channel IGBT, 50 A 650 V, 3-Pin TO-247, Through Hole

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Subtotaal (1 tube van 30 eenheden)*

€ 59,94

(excl. BTW)

€ 72,54

(incl. BTW)

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  • Plus verzending 630 stuk(s) vanaf 16 maart 2026
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30 - 90€ 1,998€ 59,94
120 - 270€ 1,84€ 55,20
300 - 570€ 1,792€ 53,76
600 - 1170€ 1,746€ 52,38
1200 +€ 1,702€ 51,06

*prijsindicatie

RS-stocknr.:
204-9877
Fabrikantnummer:
STGWA30H65DFB2
Fabrikant:
STMicroelectronics
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STMicroelectronics

Maximum Continuous Collector Current Ic

50A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

167W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Length

15.9mm

Standards/Approvals

RoHS

Height

5.1mm

Series

STG

Width

21.1 mm

Automotive Standard

No

Land van herkomst:
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C

Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

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