Infineon AIGW40N65H5XKSA1 IGBT Single Transistor IC, 74 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 215-6609
- Fabrikantnummer:
- AIGW40N65H5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 10,68
(excl. BTW)
€ 12,92
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 162 stuk(s) vanaf 16 maart 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 5,34 | € 10,68 |
| 10 - 18 | € 4,86 | € 9,72 |
| 20 - 48 | € 4,54 | € 9,08 |
| 50 - 98 | € 4,21 | € 8,42 |
| 100 + | € 3,90 | € 7,80 |
*prijsindicatie
- RS-stocknr.:
- 215-6609
- Fabrikantnummer:
- AIGW40N65H5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 74A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.66V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 74A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.66V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The Infineon high speed H5 technology insulated-gate bipolar transistor offering best-in-class efficiency in hard switching and resonant topologies.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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