Infineon, Type N-Channel IGBT Single Transistor IC, 74 A 650 V, 3-Pin TO-263, Surface
- RS-stocknr.:
- 215-6649
- Fabrikantnummer:
- IKB40N65EF5ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 1000 eenheden)*
€ 1.517,00
(excl. BTW)
€ 1.836,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 03 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 1,517 | € 1.517,00 |
*prijsindicatie
- RS-stocknr.:
- 215-6649
- Fabrikantnummer:
- IKB40N65EF5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 74A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 74A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon high speed fast switching insulated-gate bipolar transistor with full current rated rapid 1 fast and soft antiparallel diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Gerelateerde Links
- Infineon IKB40N65EF5ATMA1 IGBT 3-Pin PG-TO263-3
- Infineon IKB15N65EH5ATMA1 IGBT 3-Pin PG-TO263-3
- Infineon IKB40N65ES5ATMA1 IGBT 3-Pin PG-TO263-3
- Infineon IGB50N65S5ATMA1 Single IGBT 3-Pin PG-TO263
- Infineon IGB15N65S5ATMA1 IGBT PG-TO263-3
- Infineon IGP40N65H5XKSA1 IGBT 3-Pin PG-TO220-3
- Infineon IKB40N65EH5ATMA1 IGBT 3-Pin PG-TO247-3
- Infineon AIGW40N65H5XKSA1 IGBT 3-Pin PG-TO247-3