Infineon, Type N-Channel IGBT Single Transistor IC, 25 A 650 V, 3-Pin TO-220, Through Hole
- RS-stocknr.:
- 226-6079
- Fabrikantnummer:
- IKA10N65ET6XKSA2
- Fabrikant:
- Infineon
Subtotaal (1 tube van 50 eenheden)*
€ 39,05
(excl. BTW)
€ 47,25
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 350 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 + | € 0,781 | € 39,05 |
*prijsindicatie
- RS-stocknr.:
- 226-6079
- Fabrikantnummer:
- IKA10N65ET6XKSA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 25A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 32.5W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 25A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 32.5W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series TrenchStop | ||
Automotive Standard No | ||
The Infineon IKA10N65ET6 is good thermal performance, especially at higher frequencies and increased design margin and reliability. It is very soft, fast recovery anti-parallel rapid diode.
Very low VCE(sat) 1.5V(typ.)
Maximum junction temperature 175°C
Low gate chargeQG
Pb-free lead platingRoHS compliant
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