Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V
- RS-stocknr.:
- 244-5817
- Fabrikantnummer:
- FD150R12RT4HOSA1
- Fabrikant:
- Infineon
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 244-5817
- Fabrikantnummer:
- FD150R12RT4HOSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 790 W | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 790 W | ||
The infineon IGBT modules with fast trench/fieldstop IGBT4 and emitter controlled 4 diode are the right choice for your design it is suitable for typical applications like high frequency switching applications motor drives, UPS systems.
Electrical features
Extended operation temperature Tvj op
Low switching losses
Low VCEsat
Tvj op = 150° C
VCEsat with positive temperature coefficient
Mechanical features
Isolated base plate
Standard housing
Extended operation temperature Tvj op
Low switching losses
Low VCEsat
Tvj op = 150° C
VCEsat with positive temperature coefficient
Mechanical features
Isolated base plate
Standard housing
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