Infineon FF600R12IP4BOSA1 Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis
- RS-stocknr.:
- 260-8893
- Fabrikantnummer:
- FF600R12IP4BOSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 556,76
(excl. BTW)
€ 673,68
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 3 stuk(s) vanaf 25 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 556,76 |
| 2 + | € 556,70 |
*prijsindicatie
- RS-stocknr.:
- 260-8893
- Fabrikantnummer:
- FF600R12IP4BOSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 600A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 20mW | |
| Configuration | Dual | |
| Package Type | AG-PRIME2 | |
| Mount Type | Chassis | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.55V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 600A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 20mW | ||
Configuration Dual | ||
Package Type AG-PRIME2 | ||
Mount Type Chassis | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.55V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon PrimePACK 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP IGBT4, emitter controlled 4 diode, NTC and soft switching chip, also available with thermal interface material. High short circuit capability, self limiting short circuit current, VCEsat with positive temperature coefficient.
Extended operation temperature
High DC stability
High power density
Standardized housing
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