Infineon Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis
- RS-stocknr.:
- 260-8889
- Fabrikantnummer:
- FF600R12IE4BOSA1
- Fabrikant:
- Infineon
Subtotaal (1 tray van 3 eenheden)*
€ 1.158,66
(excl. BTW)
€ 1.401,99
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 6 stuk(s) vanaf 16 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 3 + | € 386,22 | € 1.158,66 |
*prijsindicatie
- RS-stocknr.:
- 260-8889
- Fabrikantnummer:
- FF600R12IE4BOSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 600A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 3.35kW | |
| Number of Transistors | 2 | |
| Configuration | Dual | |
| Package Type | AG-PRIME2 | |
| Mount Type | Chassis | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 600A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 3.35kW | ||
Number of Transistors 2 | ||
Configuration Dual | ||
Package Type AG-PRIME2 | ||
Mount Type Chassis | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon PrimePACK 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP IGBT4, emitter controlled 4 diode, NTC and fast switching chip. High short circuit capability, self limiting short circuit current, VCEsat with positive temperature coefficient.
Extended operation temperature
High DC stability
High power density
Standardized housing
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