Infineon IGBT Module, 650 A 150 V, 8-Pin Module, Panel
- RS-stocknr.:
- 273-7365
- Fabrikantnummer:
- F3L150R07W2E3B11BOMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 71,23
(excl. BTW)
€ 86,19
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 71,23 |
| 5 - 9 | € 69,80 |
| 10 - 99 | € 64,75 |
| 100 - 249 | € 59,36 |
| 250 + | € 54,80 |
*prijsindicatie
- RS-stocknr.:
- 273-7365
- Fabrikantnummer:
- F3L150R07W2E3B11BOMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 650A | |
| Maximum Collector Emitter Voltage Vceo | 150V | |
| Maximum Power Dissipation Pd | 335W | |
| Package Type | Module | |
| Mount Type | Panel | |
| Pin Count | 8 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 62.4mm | |
| Width | 56.7 mm | |
| Standards/Approvals | UL (E83335) | |
| Height | 16.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 650A | ||
Maximum Collector Emitter Voltage Vceo 150V | ||
Maximum Power Dissipation Pd 335W | ||
Package Type Module | ||
Mount Type Panel | ||
Pin Count 8 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 62.4mm | ||
Width 56.7 mm | ||
Standards/Approvals UL (E83335) | ||
Height 16.4mm | ||
Automotive Standard No | ||
The Infineon IGBT module has 650 V VCES, 150 A continuous DC collector current 3 level phase leg phase leg IGBT module with TRENCHSTOP IGBT3, Emitter Controlled 3 diode, NTC and Press FIT Contact Technology. This IGBT module increased blocking voltage capability to 650V and available with Al2O3 substrate with low thermal resistance.
Low VCEsat
Compact design
Rugged mounting
Low inductive design
Low Switching Losses
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