Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P, Through Hole

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RS-stocknr.:
891-2746P
Fabrikantnummer:
GT40WR21,Q(O
Fabrikant:
Toshiba
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Toshiba

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

1800 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

375 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1.8MHz

Transistor Configuration

Single

Dimensions

15.5 x 4.5 x 20mm

Maximum Operating Temperature

175 °C

Gate Capacitance

4500pF

Land van herkomst:
JP

IGBT Discretes, Toshiba



IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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